ds11302 rev. 8 - 2 1 of 3 BS870 www.diodes.com diodes incorporated BS870 n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol BS870 units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous v gss 20 v drain current (note 1) continuous i d 250 ma total power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient r ja 417 k/w operating and storage temperature range t j ,t stg -55 to +150 c case: sot-23, molded plastic case material - ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 terminal connections: see diagram marking (see page 2): k70 ordering & date code information: see page 2 weight: 0.008 grams (approx.) mechanical data a e j l top view m b c h g d k d g s note: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes, inc. suggested pad layout ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. source gate d ra i n sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm
ds11302 rev. 8 - 2 2 of 3 BS870 www.diodes.com characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 60 80 v v gs = 0v, i d = 100
a zero gate voltage drain current i dss 0.5 a v ds = 25v, v gs = 0v gate-body leakage i gss 10 na v gs = 15v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 1.0 2.0 3.0 v v ds =v gs , i d =-250
a static drain-source on-resistance r ds (on) 3.5 5.0 v gs = 10v, i d = 0.2a on-state drain current i d(on) 1.0 0.5 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 22 50 pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss 11 25 pf reverse transfer capacitance c rss 2.0 5.0 pf switching characteristics turn-on delay time t d(on) 2.0 20 ns v es = 10v, r l = 150 , v ds = 10v, r d = 100 turn-off delay time t d(off) 5.0 20 ns electrical characteristics @ t a = 25 c unless otherwise specified ordering information k70 ym (note 3) device packaging shipping BS870-7 sot-23 3000/tape & reel notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k70 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds11302 rev. 8 - 2 3 of 3 BS870 www.diodes.com 0 0.2 0.4 0.6 0.8 1 . 0 01 2 3 4 5 v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics v = 10v gs 9.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.1v 5.5v 10v 2.1v 5.0v i , drain-source current (a) d 0 1 2 3 4 5 00.2 r,n o rmalized ds(on) drain-source on-resistance i , drain current (a) d fig. 2 on-resistance vs drain current v = 5.0v gs t = 25 c j v = 10v gs 6 7 0.4 0.6 0.8 1. 0 0 v , gate to source voltage (v) gs fig. 4 on-resistance vs. gate-source voltage i=50ma d i = 500ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 r,n o rmalized ds(on) drain-source on-resistance 0 0.5 1.0 1.5 2.0 -55 -30 -5 20 45 70 95 120 14 5 r,n o rmalized ds(on) drain-source on-resistance t , junction temperature ( c) j fig. 3 on-resistance vs junction temperature v = 10v, i = 0.5a gs d v = 5.0v, i = 0.05a gs d 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 5, max power dissipation vs ambient tem p erature 150 200 250 300 350 0
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